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ME13N10A Datasheet - Matsuki

N-Channel 100V (D-S) MOSFET

ME13N10A Features

* RDS(ON) ≦145mΩ@VGS=10V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* DC/DC Converter

* Load Switch

* LCD/ LED Display inverter PIN CONFIGURATION (TO-252-3L) Top View

* The Order

ME13N10A General Description

The ME13N10A is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such a.

ME13N10A Datasheet (943.03 KB)

Preview of ME13N10A PDF

Datasheet Details

Part number:

ME13N10A

Manufacturer:

Matsuki

File Size:

943.03 KB

Description:

N-channel 100v (d-s) mosfet.

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ME13N10A N-Channel 100V D-S MOSFET Matsuki

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