ME13N10A Datasheet (Matsuki) - N-Channel 100V (D-S) MOSFET

ME13N10A, N-Channel 100V (D-S) MOSFET

The ME13N10A is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such a

ME13N10A Features

* RDS(ON) ≦145mΩ@VGS=10V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* DC/DC Converter

* Load Switch

* LCD/ LED Display inverter PIN CONFIGURATION (TO-252-3L) Top View

* The Order