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ME13N10A N-Channel 100V (D-S) MOSFET

ME13N10A Description

ME13N10A/ME13N10A-G N- Channel 100V (D-S) MOSFET GENERAL .
The ME13N10A is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

ME13N10A Features

* RDS(ON) ≦145mΩ@VGS=10V
* Super high density cell design for extremely low RDS(ON)

ME13N10A Applications

* DC/DC Converter
* Load Switch
* LCD/ LED Display inverter PIN CONFIGURATION (TO-252-3L) Top View
* The Ordering Information: ME13N10A (Pb-free) ME13N10A-G (Green product-Halogen free ) Absolute Maximum Ratings (Tc=25℃ Unless Otherwis

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Datasheet Details

Part number
ME13N10A
Manufacturer
Matsuki
File Size
943.03 KB
Datasheet
ME13N10A-Matsuki.pdf
Description
N-Channel 100V (D-S) MOSFET

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N-Channel 100V D-S MOSFET Matsuki
Matsuki ME13N10A-like datasheet