ME13N10A-G, ME13N10A N-Channel 100V (D-S) MOSFET

Matsuki

Description

ME13N10A/ME13N10A-G N- Channel 100V (D-S) MOSFET GENERAL .
The ME13N10A is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

📥 Download Datasheet

ME13N10A-G Datasheet Preview — This datasheet PDF includes multiple part numbers: ME13N10A-G, ME13N10A. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: ME13N10A-G, ME13N10A
Manufacturer: Matsuki
File Size: 943.03 KB
Datasheet: ME13N10A-Matsuki.pdf
Description: N-Channel 100V (D-S) MOSFET
Note: This datasheet PDF includes multiple part numbers: ME13N10A-G, ME13N10A.
Please refer to the document for exact specifications by model.

Features

* RDS(ON) ≦145mΩ@VGS=10V
* Super high density cell design for extremely low RDS(ON)

Applications

* DC/DC Converter
* Load Switch
* LCD/ LED Display inverter PIN CONFIGURATION (TO-252-3L) Top View
* The Ordering Information: ME13N10A (Pb-free) ME13N10A-G (Green product-Halogen free ) Absolute Maximum Ratings (Tc=25℃ Unless Otherwis

ME13N10A-G Distributors

📁 Related Datasheet

ME1117 ME1117A12 ME1117A18 ME1117A25 ME1117A33 ME1117A50

📌 All Tags

ME13N10A N-Channel 100V D-S MOSFET Matsuki

Matsuki ME13N10A-G-like datasheet