Datasheet Details
Part number:
ME13N10A-G, ME13N10A
Manufacturer:
Matsuki
File Size:
943.03 KB
Description:
N-channel 100v (d-s) mosfet.
Note:
This datasheet PDF includes multiple part numbers: ME13N10A-G, ME13N10A.
Please refer to the document for exact specifications by model.
ME13N10A-G, ME13N10A, N-Channel 100V (D-S) MOSFET
The ME13N10A is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such a
ME13N10A-G Features
* RDS(ON) ≦145mΩ@VGS=10V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current capability APPLICATIONS
* DC/DC Converter
* Load Switch
* LCD/ LED Display inverter PIN CONFIGURATION (TO-252-3L) Top View
* The Order
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