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ME16P10-G, ME16P10 P-Channel 100V (D-S) MOSFET

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Description

ME16P10/ME16P10-G P- Channel 100-V (D-S) MOSFET GENERAL .
The ME16P10 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench FEATURES. R.

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This datasheet PDF includes multiple part numbers: ME16P10-G, ME16P10. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
ME16P10-G, ME16P10
Manufacturer
Matsuki
File Size
1.05 MB
Datasheet
ME16P10-Matsuki.pdf
Description
P-Channel 100V (D-S) MOSFET
Note
This datasheet PDF includes multiple part numbers: ME16P10-G, ME16P10.
Please refer to the document for exact specifications by model.

Features

* RDS(ON)≦195mΩ@VGS=-10V
* RDS(ON)≦210mΩ@VGS=-4.5V technology. This high density process is especially tailored to
* Super high density cell design for extremely low RDS(ON) minimize on-state resistance. These devices are particularly suited
* Exceptional on-resistance and maximu

Applications

* Power Management in Note book
* DC/DC Converter
* Load Switch
* LCD Display inverter (TO-252-3L) Top View
* The Ordering Information: ME16P10 (Pb-free) ME16P10-G (Green product-Halogen free ) Absolute Max

ME16P10-G Distributors

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