Description
ME16P10/ME16P10-G P- Channel 100-V (D-S) MOSFET GENERAL .
The ME16P10 is the P-Channel logic enhancement mode power field
effect transistors are produced using high cell density, DMOS trench
FEATURES.
R.
Features
* RDS(ON)≦195mΩ@VGS=-10V
* RDS(ON)≦210mΩ@VGS=-4.5V
technology. This high density process is especially tailored to
* Super high density cell design for extremely low RDS(ON)
minimize on-state resistance. These devices are particularly suited
* Exceptional on-resistance and maximu
Applications
* Power Management in Note book
* DC/DC Converter
* Load Switch
* LCD Display inverter
(TO-252-3L) Top View
* The Ordering Information: ME16P10 (Pb-free) ME16P10-G (Green product-Halogen free )
Absolute Max