ME2320DS Datasheet PDF (N-Channel 20V (D-S) MOSFET)

ME2320DS - N-Channel 20V (D-S) MOSFET

Description

The ME2320DS is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

RDS(ON)=21mΩ@VGS=4.5V.
RDS(ON)=25 mΩ@VGS=2.5V.
RDS(ON)=33 mΩ@VGS=1.8V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.

Datasheet Details

Part number	ME2320DS
Manufacturer	Matsuki
File Size	1.24 MB
Description	N-Channel 20V (D-S) MOSFET
Datasheet	ME2320DS Datasheet
Additional preview pages of the ME2320DS datasheet.

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Full PDF Text Transcription

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Preliminary-ME2320DS/ME2320DS-G N-Channel 20V (D-S) MOSFET , ESD Protection GENERAL DESCRIPTION The ME2320DS is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (SOT-23) Top View FEATURES ● RDS(ON)=21mΩ@VGS=4.5V ● RDS(ON)=25 mΩ@VGS=2.5V ● RDS(ON)=33 mΩ@VGS=1.

Published: Mar 20, 2018 |