ME2320DS Datasheet (Matsuki) - N-Channel 20V (D-S) MOSFET

ME2320DS, N-Channel 20V (D-S) MOSFET

The ME2320DS is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such a

ME2320DS Features

* RDS(ON)=21mΩ@VGS=4.5V

* RDS(ON)=25 mΩ@VGS=2.5V

* RDS(ON)=33 mΩ@VGS=1.8V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* Portable Equipment

* Batte