ME4435 Datasheet (Matsuki) - P-Channel 30-V (D-S) MOSFET

ME4435, P-Channel 30-V (D-S) MOSFET

The ME4435 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as

ME4435 Features

* -30V/-9.1A,RDS(ON)=20mΩ@VGS=-10V

* -30V/-6.9A,RDS(ON)=35mΩ@VGS=-4.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* Portable Equipment

* Battery Pow