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ME4435

P-Channel 30-V (D-S) MOSFET

ME4435 Features

* -30V/-9.1A,RDS(ON)=20mΩ@VGS=-10V

* -30V/-6.9A,RDS(ON)=35mΩ@VGS=-4.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* Portable Equipment

* Battery Pow

ME4435 General Description

The ME4435 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as.

ME4435 Datasheet (397.72 KB)

Preview of ME4435 PDF

Datasheet Details

Part number:

ME4435

Manufacturer:

Matsuki

File Size:

397.72 KB

Description:

P-channel 30-v (d-s) mosfet.

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ME4435 P-Channel 30-V D-S MOSFET Matsuki

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