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ME4936-G

Dual N-Channel MOSFET

ME4936-G Features

* RDS(ON) 36mΩ@VGS=10V RDS(ON) 45mΩ@VGS=4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability APPLICATIONS Power Management DC/DC Converter LCD TV & Monitor Display inverter CCFL inverter e Ordering Information: ME4936(Pb-free) ME493

ME4936-G General Description

The ME4936 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application suc.

ME4936-G Datasheet (708.18 KB)

Preview of ME4936-G PDF

Datasheet Details

Part number:

ME4936-G

Manufacturer:

Matsuki

File Size:

708.18 KB

Description:

Dual n-channel mosfet.

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ME4936-G Dual N-Channel MOSFET Matsuki

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