Datasheet4U Logo Datasheet4U.com

ME4936-G, ME4936 Datasheet - Matsuki

ME4936-G Dual N-Channel MOSFET

The ME4936 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application suc.

ME4936-G Features

* RDS(ON) 36mΩ@VGS=10V RDS(ON) 45mΩ@VGS=4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability APPLICATIONS Power Management DC/DC Converter LCD TV & Monitor Display inverter CCFL inverter e Ordering Information: ME4936(Pb-free) ME493

ME4936-Matsuki.pdf

This datasheet PDF includes multiple part numbers: ME4936-G, ME4936. Please refer to the document for exact specifications by model.
ME4936-G Datasheet Preview Page 2 ME4936-G Datasheet Preview Page 3

Datasheet Details

Part number:

ME4936-G, ME4936

Manufacturer:

Matsuki

File Size:

708.18 KB

Description:

Dual n-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: ME4936-G, ME4936.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

ME4936 Dual N-Channel MOSFET (Matsuki)

ME4938D Dual N-Channel MOSFET (Matsuki)

ME4938D-G Dual N-Channel MOSFET (Matsuki)

ME4920 Dual N-Channel MOSFET (Matsuki)

ME4920-G Dual N-Channel MOSFET (Matsuki)

ME4920D Dual N-Channel MOSFET (Matsuki)

ME4920D-G Dual N-Channel MOSFET (Matsuki)

ME4925 Dual P-Channel MOSFET (Matsuki)

TAGS

ME4936-G ME4936 Dual N-Channel MOSFET Matsuki

ME4936-G Distributor