ME4956 Datasheet (Matsuki) - N- & P-Channel MOSFET

ME4956, N- & P-Channel MOSFET

The ME4956 is the N- and P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application

ME4956 Features

* RDS(ON)≦116mΩ@VGS=10V (N-Ch)

* RDS(ON)≦133mΩ@VGS=4.5V (N-Ch)

* RDS(ON)≦215mΩ@VGS=-10V (P-Ch)

* RDS(ON)≦225mΩ@VGS=-4.5V (P-Ch)

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Ma