Datasheet4U Logo Datasheet4U.com

ME4956-G

N- & P-Channel MOSFET

ME4956-G Features

* RDS(ON)≦116mΩ@VGS=10V (N-Ch)

* RDS(ON)≦133mΩ@VGS=4.5V (N-Ch)

* RDS(ON)≦215mΩ@VGS=-10V (P-Ch)

* RDS(ON)≦225mΩ@VGS=-4.5V (P-Ch)

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Ma

ME4956-G General Description

The ME4956 is the N- and P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application .

ME4956-G Datasheet (1.41 MB)

Preview of ME4956-G PDF

Datasheet Details

Part number:

ME4956-G

Manufacturer:

Matsuki

File Size:

1.41 MB

Description:

N- & p-channel mosfet.

📁 Related Datasheet

ME4956 N- & P-Channel MOSFET (Matsuki)

ME4950 Dual N-Channel MOSFET (Matsuki)

ME4950-G Dual N-Channel MOSFET (Matsuki)

ME4952 Dual N-Channel MOSFET (Matsuki)

ME4952-G Dual N-Channel MOSFET (Matsuki)

ME4953 Dual P-Channel MOSFET (Matsuki)

ME4953-G Dual P-Channel MOSFET (Matsuki)

ME4954 Dual N-Channel MOSFET (Matsuki)

ME4954-G Dual N-Channel MOSFET (Matsuki)

ME4920 Dual N-Channel MOSFET (Matsuki)

TAGS

ME4956-G P-Channel MOSFET Matsuki

Image Gallery

ME4956-G Datasheet Preview Page 2 ME4956-G Datasheet Preview Page 3

ME4956-G Distributor