Datasheet Details
Part number:
ME4956-G, ME4956
Manufacturer:
Matsuki
File Size:
1.41 MB
Description:
N- & p-channel mosfet.
Note:
This datasheet PDF includes multiple part numbers: ME4956-G, ME4956.
Please refer to the document for exact specifications by model.
ME4956-G, ME4956, N- & P-Channel MOSFET
The ME4956 is the N- and P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application
ME4956-G Features
* RDS(ON)≦116mΩ@VGS=10V (N-Ch)
* RDS(ON)≦133mΩ@VGS=4.5V (N-Ch)
* RDS(ON)≦215mΩ@VGS=-10V (P-Ch)
* RDS(ON)≦225mΩ@VGS=-4.5V (P-Ch)
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current capability APPLICATIONS
* Power Ma
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