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ME4956-G, ME4956 N- & P-Channel MOSFET

ME4956-G Description

N- and P-Channel 100-V (D-S) MOSFET GENERAL .
The ME4956 is the N- and P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

ME4956-G Features

* RDS(ON)≦116mΩ@VGS=10V (N-Ch)
* RDS(ON)≦133mΩ@VGS=4.5V (N-Ch)
* RDS(ON)≦215mΩ@VGS=-10V (P-Ch)
* RDS(ON)≦225mΩ@VGS=-4.5V (P-Ch)
* Super high density cell design for extremely low RDS(ON)

ME4956-G Applications

* Power Management
* DC/DC Converter
* LCD TV & Monitor Display inverter
* C

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: ME4956-G, ME4956. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
ME4956-G, ME4956
Manufacturer
Matsuki
File Size
1.41 MB
Datasheet
ME4956-Matsuki.pdf
Description
N- & P-Channel MOSFET
Note
This datasheet PDF includes multiple part numbers: ME4956-G, ME4956.
Please refer to the document for exact specifications by model.

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P-Channel MOSFET Matsuki
Matsuki ME4956-G-like datasheet