ME4970A Dual N-Channel MOSFET

Matsuki

Description

Dual N-Channel 30-V (D-S) MOSFET ME4970A /ME4970A-G GENERAL .
The ME4970A-G is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, FEATURES. RDS(ON.

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Datasheet Specifications

Part number: ME4970A
Manufacturer: Matsuki
File Size: 970.13 KB
Datasheet: ME4970A-Matsuki.pdf
Description: Dual N-Channel MOSFET

Features

* RDS(ON)≦14mΩ@VGS=10V
* RDS(ON)≦20mΩ@VGS=4.5V DMOS trench technology. This high density process is especially
* Super high density cell design for extremely low RDS(ON) tailored to minimize on-state resistance. These devices are
* Exceptional on-resistance and maximum DC current

Applications

* Power Management in Note book
* Portable Equipment
* Battery Powered System
* DC/DC Converter
* Load Switch
* DSC
* LCD Display inverter (SOP-8) Top View
* The Orderin

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ME4970A Dual N-Channel MOSFET Matsuki

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