Description
Dual N-Channel 30-V (D-S) MOSFET ME4970A /ME4970A-G GENERAL .
The ME4970A-G is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density,
FEATURES.
RDS(ON.
Features
* RDS(ON)≦14mΩ@VGS=10V
* RDS(ON)≦20mΩ@VGS=4.5V
DMOS trench technology. This high density process is especially
* Super high density cell design for extremely low RDS(ON)
tailored to minimize on-state resistance. These devices are
* Exceptional on-resistance and maximum DC current
Applications
* Power Management in Note book
* Portable Equipment
* Battery Powered System
* DC/DC Converter
* Load Switch
* DSC
* LCD Display inverter
(SOP-8) Top View
* The Orderin