ME50N08-G, ME50N08 Datasheet (Matsuki)

ME50N08-G, ME50N08, N-Channel MOSFET

The ME50N08 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as

ME50N08-G Features

* RDS(ON)≦8.5mΩ@VGS=10V

* RDS(ON)≦12mΩ@VGS=6V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management

* DC/DC Converter

* Load Switch

* Th Ordering Information: ME50N08 (