ME7170-G Datasheet (Matsuki) - N-Channel MOSFET

ME7170-G, N-Channel MOSFET

The ME7170-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such

ME7170-G Features

* RDS(ON)≦2.6mΩ@VGS=10V

* RDS(ON)≦3.9mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* NB/MB Vcore Low side switching

* Portable Equipment