ME7356-G Datasheet (Matsuki) - N-Channel MOSFET

ME7356-G, N-Channel MOSFET

The ME7356-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such

ME7356-G Features

* RDS(ON)≦5mΩ@VGS=10V

* RDS(ON)≦6.2mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Portable Equipment

* Battery Powered System

* DC/DC Converter

* Load Switch Ordering