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ME7812S-G N-Channel MOSFET

ME7812S-G Description

ME7812S-G N-Channel 30-V (D-S) MOSFET Integrated Schottky Diode GENERAL .
The ME7812S N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

ME7812S-G Features

* RDS(ON) ≦8.5mΩ@VGS=10V

ME7812S-G Applications

* Power Management in Note book
* Portable Equipment
* Battery Powered System
* Load Switch
* DSC PIN CONFIGURATION (DFN 3.3x3.3) Top View e Ordering Information: ME7812S-G (Green product-Halogen free) Absolute Maximum Ratings (Tj=25℃ Unless Otherwise Noted) Parameter Drain-S

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Datasheet Details

Part number
ME7812S-G
Manufacturer
Matsuki
File Size
1.09 MB
Datasheet
ME7812S-G-Matsuki.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET Matsuki
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