ME7814S-G, ME7814S Datasheet - Matsuki

ME7814S-G N-Channel MOSFET

The ME7814S-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such.

ME7814S-G Features

* RDS(ON)≦3.6mΩ@VGS=10V

* RDS(ON)≦5.1mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Portable Equipment

* Battery Powered System

* DC/DC Converter

* Load Switch Orderi

ME7814S-Matsuki.pdf

ME7814S-G Datasheet Preview — This datasheet PDF includes multiple part numbers: ME7814S-G, ME7814S. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

ME7814S-G, ME7814S

Manufacturer:

Matsuki

File Size:

1.02 MB

Description:

N-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: ME7814S-G, ME7814S.
Please refer to the document for exact specifications by model.

ME7814S-G Distributor

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ME7814S-G ME7814S N-Channel MOSFET Matsuki