ME7818S-G Datasheet (Matsuki)

ME7818S-G, N-Channel MOSFET

The ME7818S-G is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on state resistance.

These devices are particularly suited for low voltage application such as cellular

ME7818S-G Features

* RDS(ON)≦108mΩ@VGS=10V

* RDS(ON)≦137mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* DC/DC Converter

* Load Switch

* LCD Display inverte