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ME7818S-G

N-Channel MOSFET

ME7818S-G Features

* RDS(ON)≦108mΩ@VGS=10V

* RDS(ON)≦137mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* DC/DC Converter

* Load Switch

* LCD Display inverte

ME7818S-G General Description

The ME7818S-G is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on state resistance. These devices are particularly suited for low voltage application such as cellular .

ME7818S-G Datasheet (927.61 KB)

Preview of ME7818S-G PDF

Datasheet Details

Part number:

ME7818S-G

Manufacturer:

Matsuki

File Size:

927.61 KB

Description:

N-channel mosfet.

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TAGS

ME7818S-G N-Channel MOSFET Matsuki

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