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ME80N08-G, ME80N08 - N-Channel 80-V (D-S) MOSFET

ME80N08-G Description

N- Channel 80-V (D-S) MOSFET ME80N08/ME80N08-G GENERAL .
The ME80N08 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

ME80N08-G Features

* RDS(ON)≦4.9mΩ@VGS=10V
* Super high density cell design for extremely low RDS(ON)

ME80N08-G Applications

* Power Management
* DC/DC Converter
* Load Switch e Ordering Information: ME80N08 (Pb-free) ME80N08-G (Green product-Halogen free) Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current
* Tc=25℃ TC=7

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: ME80N08-G, ME80N08. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
ME80N08-G, ME80N08
Manufacturer
Matsuki
File Size
1.32 MB
Datasheet
ME80N08-Matsuki.pdf
Description
N-Channel 80-V (D-S) MOSFET
Note
This datasheet PDF includes multiple part numbers: ME80N08-G, ME80N08.
Please refer to the document for exact specifications by model.

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N-Channel 80-V D-S MOSFET Matsuki
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