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2SC4986 - NPN Transistor

2SC4986 Description

Power Transistors 2SC4986 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 7.5±0.2 4.5±0.2 3.8±0.

2SC4986 Features

* 10.8±0.2 q High collector to base voltage VCBO q High collector to emitter VCEO q Allowing automatic insertion with radial taping 2.5±0.1 90° 0.65±0.1 0.85±0.1 1.0±0.1 0.8C 0.8C 0.7±0.1 0.7±0.1 / s Absolute Maximum Ratings (Ta=25˚C) e ) Parameter Symbol Ratings Unit 16.0±1.0 c type Col

2SC4986 Applications

* or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications:
* Special applications (such as for airplanes, aerospace, automobiles, traff

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Matsushita Electric Industrial 2SC4986-like datasheet

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