MG1200FXF1US51, Toshiba
MG1200FXF1US51
Preliminary
TOSHIBA GTR Module Silicon N-Channel IGBT
MG1200FXF1US51
High Power Switching Applications Motor Control Applications
· .
MG1200V1US51, Toshiba
MG1200V1US51
TOSHIBA GTR MODULE SILICON N−CHANNEL IGBT
MG1200V1US51
HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS
FEATURES
l High Inp.
MG120R080, JILIN SINO
N N-CHANNEL Enhancement Silicon Carbide MOSFET
R
MG120R080
MAIN CHARACTERISTICS
Package
ID VCE Rdson-typ （@Vgs=18V） Qg-typ
28A 1200V 80MΩ
85nC
.
MG120V2YS40, Toshiba
TOSHIBA GTR Module Silicon N Channel IGBT
MG120V2YS40
High Power Switching Applications Motor Control Applications
MG120V2YS40
Unit: mm
l The electr.
MG12200D-BN2MM, Littelfuse
Power Module 1200V 200A IGBT Module
MG12200D-BN2MM
RoHS ®
Features
• H igh short circuit capability, self limiting short circuit current
• IGBT3 .
