MG1200FXF1US51 - TOSHIBA GTR Module Silicon N-Channel IGBT

Toshiba

Datasheet Details

Part number	MG1200FXF1US51
Manufacturer	Toshiba
File Size	94.91 KB
Description	TOSHIBA GTR Module Silicon N-Channel IGBT
Datasheet	MG1200FXF1US51 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
MG12032-01	LCD	BONA
MG120R040	N-CHANNEL Enhancement Silicon Carbide MOSFET	JILIN SINO
MG120R080	N-CHANNEL Enhancement Silicon Carbide MOSFET	JILIN SINO
MG12200D-BN2MM	IGBT	Littelfuse
MG12225WB-BN2MM	IGBT	Littelfuse

Other Datasheets by Toshiba

Part Number	Description
MG1200V1US51	TOSHIBA GTR MODULE SILICON N−CHANNEL IGBT
MG120V2YS40	N-Channel IGBT
MG100G1AL3	Transistor
MG100G1FL1	Silicon NPN Triple Transistor
MG100G2CH1	TRANSISTOR BJT POWER MODULE

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

MG1200FXF1US51 Preliminary TOSHIBA GTR Module Silicon N-Channel IGBT MG1200FXF1US51 High Power Switching Applications Motor Control Applications · · · High input impedance Enhancement mode Electrodes are isolated from case. Equivalent Circuit C G E E E E C C C Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage DC Collector current 1 ms Peak 1 cycle surge current 10 ms (half sine) Symbol VCES VGES IC ICP IFSM Tj Tstg VIsol ¾ Rating 3300 ±20 1200 2400 10 -40~125 -40~125 6000 (AC 1 min) 2/7 Nm 4 Unit V V A A kA °C °C V Operating junction temperature Storage temperature range Isolation voltage Terminal: M4/M8 Screw torque Mounting Caution: MG1200FXF1US51 has no short-circuit capability.