| Part number | MG1200FXF1US51 |
|---|---|
| Datasheet | MG1200FXF1US51_ToshibaSemiconductor.pdf |
| File Size | 94.91 KB |
| Manufacturer | Toshiba |
| Description | TOSHIBA GTR Module Silicon N-Channel IGBT |
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MG1200FXF1US51 Preliminary TOSHIBA GTR Module Silicon N-Channel IGBT MG1200FXF1US51 High Power Switching Applications Motor Control Applications · · · High input impedance Enhancement mode Electrodes are isolated from case. M4/M8 Screw torque Mounting Caution: MG1200FXF1US51 has no short-circuit capability.
| Part Number | Description |
|---|---|
| MG1200V1US51 | TOSHIBA GTR MODULE SILICON N−CHANNEL IGBT |
| MG120V2YS40 | N-Channel IGBT |
| MG100G1AL3 | Transistor |
| MG100G1FL1 | Silicon NPN Triple Transistor |
| MG100G2CH1 | TRANSISTOR BJT POWER MODULE |
| MG100G2CL1 | TRANSISTOR BJT POWER MODULE |
| MG100G2DL1 | TRANSISTOR BJT POWER MODULE |
| MG100G2JL1 | TRANSISTOR BJT POWER MODULE |
| MG100H1AL2 | DARLINGTON POWER MODULE |
| MG100H2DL1 | DARLINGTON POWER MODULE |
