• Part: MG120V2YS40
  • Manufacturer: Toshiba
  • Size: 171.10 KB
Download MG120V2YS40 Datasheet PDF
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MG120V2YS40 Description

TOSHIBA GTR Module Silicon N Channel IGBT MG120V2YS40 High Power Switching Applications Motor Control Applications MG120V2YS40 Unit: mm l The electrodes are isolated from case. l High input impedance l Includes a plete half bridge in one package.

MG120V2YS40 Key Features

  • The electrodes are isolated from case
  • High input impedance
  • Includes a plete half bridge in one package
  • Enhancement-mode
  • High speed : tf = 1.5µs (max) (IC = 120A) trr = 0.6µs (max) (IF = 120A) Equivalent Circuit Maximum Ratings