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MG1200V1US51 - TOSHIBA GTR MODULE SILICON N−CHANNEL IGBT

Key Features

  • l High Input Impedance l Enhancement Mode l Electrodes are isolated from case.

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Datasheet Details

Part number MG1200V1US51
Manufacturer Toshiba
File Size 96.22 KB
Description TOSHIBA GTR MODULE SILICON N−CHANNEL IGBT
Datasheet download datasheet MG1200V1US51 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MG1200V1US51 TOSHIBA GTR MODULE SILICON N−CHANNEL IGBT MG1200V1US51 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS FEATURES l High Input Impedance l Enhancement Mode l Electrodes are isolated from case.