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2N6660

N-Channel Enhancement-Mode Vertical DMOS FET

2N6660 Features

* Free from secondary breakdown

* Low power drive requirement

* Ease of paralleling

* Low CISS and fast switching speeds

* Excellent thermal stability

* Integral source-drain diode

* High input impedance and high gain Applications

* Mot

2N6660 General Description

2N6660 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and a wellproven silicon-gate manufacturing process. This combination produces a device with the power-handling capabilities of bipolar transistors, and the high input impedance and positive temperature c.

2N6660 Datasheet (292.59 KB)

Preview of 2N6660 PDF

Datasheet Details

Part number:

2N6660

Manufacturer:

Microchip ↗

File Size:

292.59 KB

Description:

N-channel enhancement-mode vertical dmos fet.

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2N6660 N-Channel Enhancement-Mode Vertical DMOS FET Microchip

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