2N6661 Datasheet (Microchip) - N-Channel Enhancement-Mode Vertical DMOS FET

2N6661, N-Channel Enhancement-Mode Vertical DMOS FET

2N6661 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and a wellproven silicon-gate manufacturing process.

This combination produces a device with the power-handling capabilities of bipolar transistors, and the high input impedance and positive temperature c

2N6661 Features

* Free from secondary breakdown

* Low power drive requirement

* Ease of paralleling

* Low CISS and fast switching speeds

* Excellent thermal stability

* Integral source-drain diode

* High input impedance and high gain Applications

* Mot