2N6661 - N-Channel Enhancement-Mode Vertical DMOS FETs

Product Overview

Supertex Inc

Datasheet Details

Part number	2N6661
Manufacturer	Supertex Inc
File Size	302.50 KB
Description	N-Channel Enhancement-Mode Vertical DMOS FETs
Datasheet	2N6661 Datasheet
Additional preview pages of the 2N6661 datasheet.

Product details

Description

The Supertex 2N6661 is an enhancement-mode (normallyoff) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.

Features

Free from secondary breakdown.
Low power drive requirement.
Ease of paralleling.
Low CISS and fast switching speeds.
Excellent thermal stability.
Integral source-drain diode.
High input impedance and high gain.
Hi-Rel processing available General.

📁 Similar Datasheet

2N6661-2 - N-Channel MOSFET (Vishay)
2N6661JANTX - N-Channel MOSFET (Vishay)
2N6661JANTXV - N-Channel MOSFET (Vishay)
2N6660-2 - N-Channel MOSFET (Vishay Siliconix)
2N6660JAN - N-Channel MOSFET (Vishay)
2N6660JANTX - N-Channel MOSFET (Vishay Siliconix)
2N6660JANTXV - N-Channel MOSFET (Vishay Siliconix)
2N6660X - N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR (Seme LAB)

Other Datasheets by Supertex Inc

2N6660 - N-Channel Enhancement-Mode Vertical DMOS FETs

Published: Mar 22, 2005 |