2N6661 Datasheet - TT

N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6661 VDSS = 90V , ID = 0.9A, RDS(ON) = 4.0Ω Fast Switching Low Threshold Voltage (Logic Level) Low CISS Integral Source-Drain Body Diode Hermetic Metal TO39 Package High Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VDS Drain Source Voltage 90V VGS Gate Source Voltage ±20V ID Continuous Drain Current