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2N6661 Datasheet - TT

2N6661 N-CHANNEL ENHANCEMENT MODE POWER MOSFET

N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6661 VDSS = 90V , ID = 0.9A, RDS(ON) = 4.0Ω Fast Switching Low Threshold Voltage (Logic Level) Low CISS Integral Source-Drain Body Diode Hermetic Metal TO39 Package High Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VDS Drain Source Voltage 90V VGS Gate Source Voltage ±20V ID Continuous Drain Current .

2N6661-TT.pdf

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Datasheet Details

Part number:

2N6661

Manufacturer:

TT

File Size:

77.49 KB

Description:

N-channel enhancement mode power mosfet.

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2N6661 2N6661 N-CHANNEL ENHANCEMENT MODE POWER MOSFET TT

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