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2N6059 Datasheet - TT

2N6059 SILICON MULTI-EPITAXIAL NPN TRANSISTOR

SILICON MULTI-EPITAXIAL NPN TRANSISTOR 2N6059 High Current Capability. Hermetic TO3 Metal package. Screening Options Available. ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO Collector Base Voltage 100V VCEO Collector Emitter Voltage 100V VEBO Emitter Base Voltage 5V IC Continuous Collector Current 12A IB Base Current 0.2A PD Total Power Dissipation at TC = 25°C 150W Derate Above 25°C 1.00W/°C TJ.

2N6059-TT.pdf

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Datasheet Details

Part number:

2N6059

Manufacturer:

TT

File Size:

180.44 KB

Description:

Silicon multi-epitaxial npn transistor.

2N6059 Distributor

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2N6059 2N6059 SILICON MULTI-EPITAXIAL NPN TRANSISTOR TT