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2N6660 Datasheet - TT

2N6660 N-Channel Enhancement Mode Power MOSFET

N-Channel Enhancement Mode Power MOSFET 2N6660 Hermetic Metal TO39 (TO-205AD) Package VDSS = 60V , ID = 1.0A, RDS(ON) = 3.0Ω Fast Switching, Low CISS Integral Source-Drain Body Diode High Reliability and Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VDS Drain - Source Voltage VGS Gate - Source Voltage ID(1) Continuous Drain Current TC = 25°C IDM(1) Pulsed Drain Current PD Total Power Dissipation at TC ≤ 25°C De-rate TC > 25°C Total Power Di.

2N6660-TT.pdf

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Datasheet Details

Part number:

2N6660

Manufacturer:

TT

File Size:

535.43 KB

Description:

N-channel enhancement mode power mosfet.

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2N6660 2N6660 N-Channel Enhancement Mode Power MOSFET TT

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