MMA042PP4 Datasheet - Microchip

MMA042PP4 GaAs MMIC

MMA042PP4 2 26 GHz Distributed Self-Biased LNA Product Overview MMA042PP4 is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic highelectron mobility transistor (pHEMT) distributed amplifier that operates between 2 GHz and 26 GHz. It is ideal for test instrumentation, defense, and space applications. The amplifier provides a 2 dB positive gain slope with a typical gain of 18 dB, 2.5 dB noise figure, 19 dBm of output power at 1 dB gain compression, .

MMA042PP4 Features

* RF I/Os that are internally matched to 50 Ω. Key Features

* Frequency range: 2 to 26 GHz

* High Gain: 18 dB with +2 dB upslope

* Low Noise figure: 2.5 dB

* High Output IP3: + 29 dBm

* Maximum RF Input Power: + 24 dBm

* Single Positive Supply: +6V @ 1

MMA042PP4-Microchip.pdf