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MSC360SMA120S N-Channel Power MOSFET

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Description

MSC360SMA120S 1200 V, 360 mΩ SiC N-Channel Power MOSFET Product Overview The silicon carbide (SiC) power MOSFET product line from Microsemi increases .

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Features

* The following are key features of the MSC360SMA120S device:
* Low capacitances and low gate charge
* Fast switching speed due to low internal gate resistance (ESR)
* Stable operation at high junction temperature, TJ(max) = 175 °C
* Fast and reliable body diode

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