* The following are key features of the MSC360SMA120S device:
* Low capacitances and low gate charge
* Fast switching speed due to low internal gate resistance (ESR)
* Stable operation at high junction temperature, TJ(max) = 175 °C
* Fast and reliable body diode
MSC360SMA120S Datasheet (6.83 MB)
MSC360SMA120S
6.83 MB
N-channel power mosfet.
MSC360SMA120S
1200 V, 360 mΩ SiC N-Channel Power MOSFET
Product Overview
The silicon carbide (SiC) power MOSFET product line from Microsemi increases .
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