MT48H16M16LFFG Datasheet - Micron Technology

MT48H16M16LFFG 256M x 16 Mobile SDRAM

The 256Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits. It is internally configured as a quadbank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x16’s 67,108,864-bit banks is organized .

MT48H16M16LFFG Features

* Temperature Compensated Self Refresh (TCSR)

* Fully synchronous; all signals registered on positive edge of system clock

* Internal pipelined operation; column address can be changed every clock cycle

* Internal banks for hiding row access/precharge

* Progra

MT48H16M16LFFG Datasheet (1.65 MB)