MT48H32M16LF - Mobile LPSDR SDRAM

Micron Technology

MT48H32M16LF Datasheet Preview — Preview of MT48H32M16LF PDF

Datasheet Details

Part number	MT48H32M16LF
Manufacturer	Micron Technology
File Size	2.49 MB
Description	Mobile LPSDR SDRAM
Datasheet	MT48H32M16LF-MicronTechnology.pdf

MT48H32M16LF Product details

Description

7 Functional Block Diagram 8 Ball Assignments and Descriptions 9 Package Dimensions 12 Electrical Specifications 14 Absolute Maximum Ratings 14 Electrical Specifications IDD Parameters 16 Electrical Specifications AC Operating Conditions 20 Output Drive Characteristics 23 Functional Description 26 Commands 27 COMMAND INHIBIT 28 NO OPERATION (NOP) 28 LOAD MODE REGISTER (LMR) 28 ACTIVE 28 READ 29 WRITE 30 PRECHARGE 31 BURST TERMINATE 31 AUTO REFRESH 31 SELF

Features

Mobile LPSDR SDRAM MT48H32M16LF.
8 Meg x 16 x 4 Banks MT48H16M32LF/LG.
4 Meg x 32 x 4 Banks Features.
VDD/VDDQ = 1.7.
1.95V.
Fully synchronous; all signals registered on positive edge of system clock.
Internal, pipelined operation; column address can be changed every clock cycle.
Four internal banks for concurrent operation.
Programmable burst lengths: 1, 2, 4, 8, and continuous.
Auto precharge, includes concurrent a.

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Other Datasheets by Micron Technology

MT48H32M32LF - Mobile LPSDR SDRAM
MT48H32M32LG - Mobile LPSDR SDRAM
MT48H16M16LF - (MT48H16M16LF / MT48H16M32LF) 16 Meg x 32 Mobile SDRAM
MT48H16M16LFBG - 256M x 16 Mobile SDRAM
MT48H16M16LFFG - 256M x 16 Mobile SDRAM
MT48H16M32LF - Mobile LPSDR SDRAM

Published: Oct 11, 2014 |