M29W512GH70N3E - Parallel NOR Flash Embedded Memory
M29W512GH70N3E Features
* Parallel NOR Flash Embedded Memory M29W512GH70N3E, M29W512GH7AN6E Features
* Stacked device (two 256Mb die)
* Supply voltage
* VCC = 2.7
* 3.6V (program, erase, read)
* VCCQ = 1.65
* 3.6V (I/O buffers)
* VPPH = 12V for fast program (optional)
