M29W512GH7AN6E, M29W512GH70N3E Datasheet - Micron

M29W512GH7AN6E - Parallel NOR Flash Embedded Memory

M29W512GH7AN6E Features

* Parallel NOR Flash Embedded Memory M29W512GH70N3E, M29W512GH7AN6E Features

* Stacked device (two 256Mb die)

* Supply voltage

* VCC = 2.7

* 3.6V (program, erase, read)

* VCCQ = 1.65

* 3.6V (I/O buffers)

* VPPH = 12V for fast program (optional)

M29W512GH70N3E-Micron.pdf

M29W512GH7AN6E Datasheet Preview — This datasheet PDF includes multiple part numbers: M29W512GH7AN6E, M29W512GH70N3E. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

M29W512GH7AN6E, M29W512GH70N3E

Manufacturer:

Micron

File Size:

911.97 KB

Description:

Parallel nor flash embedded memory.

Note:

This datasheet PDF includes multiple part numbers: M29W512GH7AN6E, M29W512GH70N3E.
Please refer to the document for exact specifications by model.

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M29W512GH70N3E Parallel NOR Flash Embedded Memory Micron