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BFR90 - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

BFR90 Description

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 BFR90 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Feat.
Designed primarily for use in high-gain, low noise, small-signal amplifiers.

BFR90 Features

* High Current-Gain
* Bandwidth Product, fT = 5.0 GHz (typ) @ IC = 14 mA Low Noise Figure
* NF = 2.4 dB (typ) @ f = 0.5 GHz High Power Gain

BFR90 Applications

* requiring fast switching times. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 15 20 3.0 30 Unit Vdc Vdc Vdc mA Thermal Data P D Total Device Dissipation @ TA = 60ºC Derate abo

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MICROWAVE DISCRETE LOW POWER TRANSISTORS Microsemi Corporation
Microsemi Corporation BFR90-like datasheet