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BFR91 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

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Description

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 BFR91 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Feat.
Designed primarily for use in high-gain, low noise, small-signal amplifiers.

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Features

* High Current-Gain
* Bandwidth Product, fT = 5 GHz (typ) @ IC = 30 mA Low Noise Figure
* NF = 1.9 dB (typ) @ f = 0.5 GHz, 2.5 dB (typ) @ 1GHz High Power Gain

Applications

* requiring fast switching times. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 12 15 3.0 35 Unit Vdc Vdc Vdc mA Thermal Data P D Total Device Dissipation @ TA = 60ºC Derate abo

BFR91 Distributors

📁 Related Datasheet

BFR91A BFR91G BFR90 BFR90A BFR90G BFR92

📌 All Tags

BFR91 MICROWAVE DISCRETE LOW POWER TRANSISTORS Microsemi Corporation
Microsemi Corporation BFR91-like datasheet
BFR96