1214GN-400LV - RF/Microwave Power Transistor

Name: 1214GN-400LV
SKU: 1214GN-400LV-973632

Microsemi

📥 Download Datasheet

1214GN-400LV Datasheet Preview — Preview of 1214GN-400LV PDF

Datasheet Details

Part number	1214GN-400LV
Manufacturer	Microsemi
File Size	98.95 KB
Description	RF/Microwave Power Transistor
Datasheet	1214GN-400LV-Microsemi.pdf

1214GN-400LV Product details

Description

The 1214GN-400LV is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 16dB gain, 400 Watts of pulsed RF output power at 4.5ms pulse width, 30% duty factor across the 1200 to 1400 MHz band.

📁 1214GN-400LV Similar Datasheet

121-0426 - I Type Battery Snaps (Eagle)
121-93-xxx - Dual-in-line sockets Open frame Wire-wrap (Precid-Dip)
1210 - Multilayer Chip Ceramic Capacitor (HITANO)
12102Rxxxx - Surface Mount Ceramic Multilayer Capacitors (Yageo)
1210A - (1210xA) Single Phase Bridge (VMI)
1210B - (1210xB) Single Phase Bridge (VMI)
1210B104xxx - Multilayer Ceramic Chip Capacitors (American Accurate Components)
1210C - (1210xC) Single Phase Bridge (VMI)

Other Datasheets by Microsemi

1214GN-120E - 120W L-Band Radar GaN Power Transistor and Pallet Amplifier
1214GN-15E - Earless Driver GaN Transistor
1214GN-50E - GaN Transistor
1214GN-50EL - GaN Transistor
1214GN-50EP - GaN Transistor
1214GN-650V - RF/Microwave Power Transistor

Published: Mar 9, 2016 |