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1214GN-400LV RF/Microwave Power Transistor

1214GN-400LV Description

1214GN-400LV 400 Watts - 50 Volts, 4.5ms, 30% Broad Band 1200 - 1400 MHz GENERAL .
The 1214GN-400LV is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 16dB gain, 400 Watts of pulsed.

1214GN-400LV Applications

* It utilizes gold metallization and eutectic attach to provide highest reliability and superior ruggedness. ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation Device Dissipation @ 25C 800 W Maximum Voltage and Current Drain-Source Voltage (VDSS) 150 V Gate-Source Voltage (VGS) -8 to +0 V M

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Microwave Power Transistor Microsemi
Microsemi 1214GN-400LV-like datasheet