Datasheet4U Logo Datasheet4U.com

1214GN-650V - RF/Microwave Power Transistor

📥 Download Datasheet

Preview of 1214GN-650V PDF
datasheet Preview Page 2 datasheet Preview Page 3

1214GN-650V Product details

Description

The 1214GN-650V is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 17dB gain, 650 Watts of pulsed RF output power at 150μs pulse width, 10% duty cycle across the 1200 to 1400 MHz band.

📁 1214GN-650V Similar Datasheet

  • 121-0426 - I Type Battery Snaps (Eagle)
  • 121-93-xxx - Dual-in-line sockets Open frame Wire-wrap (Precid-Dip)
  • 1210 - Multilayer Chip Ceramic Capacitor (HITANO)
  • 12102Rxxxx - Surface Mount Ceramic Multilayer Capacitors (Yageo)
  • 1210A - (1210xA) Single Phase Bridge (VMI)
  • 1210B - (1210xB) Single Phase Bridge (VMI)
  • 1210B104xxx - Multilayer Ceramic Chip Capacitors (American Accurate Components)
  • 1210C - (1210xC) Single Phase Bridge (VMI)
Other Datasheets by Microsemi
Published: |