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1214GN-50EP, 1214GN-50E GaN Transistor

1214GN-50EP Description

1214GN-50E/EL/EP 50 Watts * 50 Volts * 300us, 10% 1200-1400 MHz E Series Earless/Eared GaN Transistor * Key .

1214GN-50EP Features

* 1200-1400MHz, 50W Output Power at 300µS, 10% pulsing
* 50V Bias Voltage, Common Source, Class AB
* >60% Typical Efficiency Across the Frequency Band
* Extremely Compact Size
* Over 16dB typical Power Gain
* Excellent Gain Flatness
* Radar, L-Band Avionics, Communication

1214GN-50EP Applications

* All gold metallization and eutectic die attach for highest reliability
* 50Ω in/out lumped element very small footprint plug & play pallets available ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation Device Dissipation @ 25C 100 W Maximum Voltage and Current Drain-Source Voltage (VDS

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: 1214GN-50EP, 1214GN-50E. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
1214GN-50EP, 1214GN-50E
Manufacturer
Microsemi ↗
File Size
1.23 MB
Datasheet
1214GN-50E-Microsemi.pdf
Description
GaN Transistor
Note
This datasheet PDF includes multiple part numbers: 1214GN-50EP, 1214GN-50E.
Please refer to the document for exact specifications by model.

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📌 All Tags

GaN Transistor Microsemi
Microsemi 1214GN-50EP-like datasheet