Datasheet4U Logo Datasheet4U.com

1214GN-50E GaN Transistor

1214GN-50E Description

1214GN-50E/EL/EP 50 Watts * 50 Volts * 300us, 10% 1200-1400 MHz E Series Earless/Eared GaN Transistor * Key .

1214GN-50E Features

* 1200-1400MHz, 50W Output Power at 300µS, 10% pulsing
* 50V Bias Voltage, Common Source, Class AB
* >60% Typical Efficiency Across the Frequency Band
* Extremely Compact Size
* Over 16dB typical Power Gain
* Excellent Gain Flatness
* Radar, L-Band Avionics, Communication

1214GN-50E Applications

* All gold metallization and eutectic die attach for highest reliability
* 50Ω in/out lumped element very small footprint plug & play pallets available ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation Device Dissipation @ 25C 100 W Maximum Voltage and Current Drain-Source Voltage (VDS

📥 Download Datasheet

Preview of 1214GN-50E PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • 121-0426 - I Type Battery Snaps (Eagle)
  • 121-93-xxx - Dual-in-line sockets Open frame Wire-wrap (Precid-Dip)
  • 1210 - Multilayer Chip Ceramic Capacitor (HITANO)
  • 12102Rxxxx - Surface Mount Ceramic Multilayer Capacitors (Yageo)
  • 1210A - (1210xA) Single Phase Bridge (VMI)
  • 1210B - (1210xB) Single Phase Bridge (VMI)
  • 1210B104xxx - Multilayer Ceramic Chip Capacitors (American Accurate Components)
  • 1210C - (1210xC) Single Phase Bridge (VMI)

📌 All Tags

GaN Transistor Microsemi
Microsemi 1214GN-50E-like datasheet