1214GN-50E GaN Transistor

Microsemi

Description

1214GN-50E/EL/EP 50 Watts * 50 Volts * 300us, 10% 1200-1400 MHz E Series Earless/Eared GaN Transistor * Key .

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Datasheet Specifications

Part number: 1214GN-50E
Manufacturer: Microsemi ↗
File Size: 1.23 MB
Datasheet: 1214GN-50E-Microsemi.pdf
Description: GaN Transistor

Features

* 1200-1400MHz, 50W Output Power at 300µS, 10% pulsing
* 50V Bias Voltage, Common Source, Class AB
* >60% Typical Efficiency Across the Frequency Band
* Extremely Compact Size
* Over 16dB typical Power Gain
* Excellent Gain Flatness
* Radar, L-Band Avionics, Communication

Applications

* All gold metallization and eutectic die attach for highest reliability
* 50Ω in/out lumped element very small footprint plug & play pallets available ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation Device Dissipation @ 25C 100 W Maximum Voltage and Current Drain-Source Voltage (VDS

1214GN-50E Distributors

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1214GN-50E GaN Transistor Microsemi

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