Description
1214GN-50E/EL/EP 50 Watts * 50 Volts * 300us, 10% 1200-1400 MHz E Series Earless/Eared GaN Transistor * Key .
Features
* 1200-1400MHz, 50W Output Power at 300µS, 10% pulsing
* 50V Bias Voltage, Common Source, Class AB
* >60% Typical Efficiency Across the Frequency Band
* Extremely Compact Size
* Over 16dB typical Power Gain
* Excellent Gain Flatness
* Radar, L-Band Avionics, Communication
Applications
* All gold metallization and eutectic die attach for highest reliability
* 50Ω in/out lumped element very small footprint plug & play pallets available
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation Device Dissipation @ 25C
100 W
Maximum Voltage and Current Drain-Source Voltage (VDS