2N6211 Datasheet (Microsemi) - PNP HIGH POWER SILICON TRANSISTOR

2N6211, PNP HIGH POWER SILICON TRANSISTOR

TECHNICAL DATA PNP HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/461 Devices 2N6211 2N6212 2N6213 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Symbol 2N6211 2N6212 2N6213 Unit Collector-Emitter Voltage VCEO 225 300 350 Vdc Collector-Base Voltage VCBO 275 350 400 Vdc Emitter-Base Voltage VEBO 6.0 Vdc Base Current IB 1.0 Adc Collector Current Total Power Dissipation IC @ TA = +250C (1) @ TC = +250C (2) PT 2.0 Adc 3.0 W 35 W Operating & St