2N6274
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Npn power silicon transistor.
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2N6270 - Bipolar NPN Device
(Seme LAB)
2N6270
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN.
2N6270 - Silicon Power Transistors
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..
Product Specification
Silicon NPN Power Transistors
2N6270 2N6271
DESCRIPTION ·With TO-3 package ·High .
2N6271 - Silicon Power Transistors
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2N6270 2N6271
DESCRIPTION ·With TO-3 package ·High .
2N6271 - Bipolar NPN Device
(Seme LAB)
2N6271
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44)
6.35 (0.25) 9.15 (0.36)
1.52 (0.06) 3.43 (0.135)
Bipolar NPN .
2N6274 - POWER TRANSISTORS
(ON Semiconductor)
High-Power NPN Silicon Transistors
. . . designed for use in industrial–military power amplifier and switching circuit applications.
• High Collector .
2N6274 - NPN High Power Silicon Transistor
(VPT)
2N6274, 2N6277
NPN High Power Silicon Transistor
Features
• Available in JAN, JANTX, JANTXV per MIL-PRF-19500/514 • TO-3 (TO-204AA) Package • Designe.
2N6274 - Silicon NPN Power Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: VCEO=100V(Min) ·Minimum Lot-to-Lot variations for robust device
.
2N6274 - Bipolar NPN Device
(Seme LAB)
2N6274
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44)
6.35 (0.25) 9.15 (0.36)
1.52 (0.06) 3.43 (0.135)
Bipolar NPN .
2N6274 - Silicon NPN Power Transistor
(Inchange Semiconductor)
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2N6274
DESCRIPTION ·High Switching Speed ·High DC Current Gain-
: .
2N6274 - High Power NPN SIlicon Transistor
(Motorola)
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
High-Power NPN Silicon Transistors
. . . designed for use in industrial–military power amplifer and switching .
