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2N6212, 2N6211 Datasheet - Microsemi

2N6212 PNP HIGH POWER SILICON TRANSISTOR

TECHNICAL DATA PNP HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/461 Devices 2N6211 2N6212 2N6213 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Symbol 2N6211 2N6212 2N6213 Unit Collector-Emitter Voltage VCEO 225 300 350 Vdc Collector-Base Voltage VCBO 275 350 400 Vdc Emitter-Base Voltage VEBO 6.0 Vdc Base Current IB 1.0 Adc Collector Current Total Power Dissipation IC @ TA = +250C (1) @ TC = +250C (2) PT 2.0 Adc 3.0 W 35 W Operating & St.

2N6211-Microsemi.pdf

This datasheet PDF includes multiple part numbers: 2N6212, 2N6211. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

2N6212, 2N6211

Manufacturer:

Microsemi ↗

File Size:

48.20 KB

Description:

Pnp high power silicon transistor.

Note:

This datasheet PDF includes multiple part numbers: 2N6212, 2N6211.
Please refer to the document for exact specifications by model.

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2N6212 2N6211 PNP HIGH POWER SILICON TRANSISTOR Microsemi

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