* SiC JFET, Normally off (4
* SJEC120R100 in parallel per switch) Pins 7/8; 9/10; 11/12 must be shorted together
* SiC Schottky Diode (3
* SDC10S120 in parallel per switch) - Zero reverse recovery - Zero forward recovery - Temperature-independent switching behavior - Positiv
APTJC120AM25VCT1AG Datasheet (146.01 KB)
APTJC120AM25VCT1AG
146.01 KB
Sic power module.
APTJC120AM25VCT1AG
Phase leg SiC Power Module
VDSX = 1200V RDSon = 25 mΩ max @ Tj = 25 °C ID = 50 A @ Tc = 50 °C
Application
* Welding conv.
📁 Related Datasheet
APTJC120AM13VCT1AG SiC Power Module (Microsemi)
APT05DC120HJ SiC Diode Full Bridge Power Module (Microsemi)
APT06DC60HJ SiC Diode Full Bridge Power Module (Microsemi)
APT1001R1AVR MOSFET (Advanced Power Technology)
APT1001R1BN MOSFET (Advanced Power Technology)
APT1001R1BVFR MOSFET (Advanced Power Technology)
APT1001R1HVR MOSFET (Advanced Power Technology)
APT1001R3BN MOSFET (Advanced Power Technology)
APT1001R6BFLL POWER MOS 7 R FREDFET (Advanced Power Technology)
APT1001R6BN MOSFET (Advanced Power Technology)
