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APTJC120AM25VCT1AG - SiC Power Module

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Microsemi

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APTJC120AM25VCT1AG SiC Power Module by Microsemi - Datasheet Preview — Datasheet preview – APTJC120AM25VCT1AG

Datasheet Details

Part number	APTJC120AM25VCT1AG
Manufacturer	Microsemi
File Size	146.01 KB
Description	SiC Power Module
Datasheet	APTJC120AM25VCT1AG Datasheet
Additional preview pages of the APTJC120AM25VCT1AG datasheet.

Product details

Features

SiC JFET, Normally off (4.
SJEC120R100 in parallel per switch) Pins 7/8; 9/10; 11/12 must be shorted together.
SiC Schottky Diode (3.
SDC10S120 in parallel per switch) - Zero reverse recovery - Zero forward recovery - Temperature-independent switching behavior - Positive temperature coefficient on VF.
Very low stray inductance.
Internal RC decoupling snubber.
High level of integration.
AlN substrate for improved thermal performanc.

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Published: Feb 10, 2017 |