APTJC120AM25VCT1AG SiC Power Module

Microsemi

Description

APTJC120AM25VCT1AG Phase leg SiC Power Module VDSX = 1200V RDSon = 25 mΩ max @ Tj = 25 °C ID = 50 A @ Tc = 50 °C Application * Welding conv.

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Datasheet Specifications

Part number: APTJC120AM25VCT1AG
Manufacturer: Microsemi ↗
File Size: 146.01 KB
Datasheet: APTJC120AM25VCT1AG-Microsemi.pdf
Description: SiC Power Module

Features

* SiC JFET, Normally off (4
* SJEC120R100 in parallel per switch) Pins 7/8; 9/10; 11/12 must be shorted together
* SiC Schottky Diode (3
* SDC10S120 in parallel per switch) - Zero reverse recovery - Zero forward recovery - Temperature-independent switching behavior - Positiv

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APTJC120AM25VCT1AG SiC Power Module Microsemi

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