MM118-06 Datasheet (Microsemi) - 3 PHASE N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR IGBT BRIDGE

MM118-06, 3 PHASE N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR IGBT BRIDGE

Short Circuit Reverse Current (RBSOA) @ Tj= 125° C, VCE= 0.8 x VCES Junction and Storage Temperature Range (° C) Continuous Source Current (parallel Diode) Pulse Source Current (parallel Diode) SYMBOL Imax Tj, Tstg IS ISM MM118-06 64 A -55 to +150 60 A 100 A MM118-12 66 A -55 to +150 50 A 100 A Ele

MM118-06 Features

* Available in Low Conduction Loss Class as MM118-xxL or Fast Switching Class as MM118-xxF

* Compact and rugged construction offering weight and space savings

* Available with PC board solderable pins (see mechanical outline below) or threaded terminals (add “ T”suffix to par