MM118-06F 3 PHASE N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR IGBT BRIDGE

Microsemi

Description

2830 S.Fairview St.Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 .
Short Circuit Reverse Current (RBSOA) @ Tj= 125° C, VCE= 0.

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Datasheet Specifications

Part number: MM118-06F
Manufacturer: Microsemi ↗
File Size: 116.51 KB
Datasheet: MM118-06F_MicrosemiCorporation.pdf
Description: 3 PHASE N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR IGBT BRIDGE

Features

* Available in Low Conduction Loss Class as MM118-xxL or Fast Switching Class as MM118-xxF
* Compact and rugged construction offering weight and space savings
* Available with PC board solderable pins (see mechanical outline below) or threaded terminals (add “ T”suffix to par

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MM118-06F PHASE N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR IGBT BRIDGE Microsemi

Microsemi MM118-06F-like datasheet