* The following are key features of the MSC015SMA070B4 device: Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = 175 °C Fast and reliable body diode Superior avalanche ruggedness RoHS compliant
MSC015SMA070B4 Datasheet (1.49 MB)
MSC015SMA070B4
1.49 MB
Silicon carbide n-channel power mosfet.
MSC015SMA070B4 Silicon Carbide N-Channel Power MOSFET 1 Product Overview The silicon carbide (SiC) power MOSFET product line from Microsemi increas.
📁 Related Datasheet
MSC015SMA070B Silicon Carbide N-Channel Power MOSFET (Microsemi)
MSC015SMA070B N-Channel MOSFET (Microchip)
MSC015SMA070B4 N-Channel MOSFET (Microchip)
MSC015SDA120B Zero Recovery Silicon Carbide Schottky Diode (Microsemi)
MSC010SDA070B Zero Recovery Silicon Carbide Schottky Diode (Microchip)
MSC010SDA070BCT 10A Silicon Carbide Schottky Dual Diode (Microchip)
MSC010SDA070K Zero Recovery Silicon Carbide Schottky Diode (Microchip)
MSC010SDA070S Zero Recovery Silicon Carbide Schottky Diode (Microchip)
MSC010SDA120B Zero Recovery Silicon Carbide Schottky Diode (Microsemi)
MSC010SDA170B Zero Recovery Silicon Carbide Schottky Diode (Microsemi)
