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MSC060SMA070B Silicon Carbide N-Channel Power MOSFET

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Description

MSC060SMA070B Silicon Carbide N-Channel Power MOSFET 1 Product Overview The silicon carbide (SiC) power MOSFET product line from Microsemi increase.

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Features

* The following are key features of the MSC060SMA070B device: Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = 175 °C Fast and reliable body diode Superior avalanche ruggedness RoHS compliant

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