* The following are key features of the MSC060SMA070B device: Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = 175 °C Fast and reliable body diode Superior avalanche ruggedness RoHS compliant
MSC060SMA070B Datasheet (1.62 MB)
MSC060SMA070B
1.62 MB
Silicon carbide n-channel power mosfet.
MSC060SMA070B Silicon Carbide N-Channel Power MOSFET
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Product Overview
The silicon carbide (SiC) power MOSFET product line from Microsemi increase.
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