* DIRECT REPLACEMENT FOR INTERSIL 3N164 ABSOLUTE MAXIMUM RATINGS1 @ 25°C (unless otherwise noted) ‐65°C to +200°C ‐55°C to +150°C 375mW 50mA Maximum Temperatures Storage Temperature (See Packaging Information). Operating Junction Temperature Maximum Power Dissipation Continuous Power Diss
3N164
Micross
378.12 KB
High speed switch.
3N164 P-CHANNEL MOSFET
The 3N164 is an enhancement mode P-Channel Mosfet
The 3N164 is an enhancement mode P-Channel Mosfet designed for use as a Gene.
📁 Related Datasheet
3N161 - DIODE PROTECTED P-CHANNEL ENGANCEMENT MODE MOSFET GENERAL PUROPSE AMPLIFIER/SWITCH
(Intersil Corporation)
.
3N163 - P-Channel Enhancement-Mode MOS Transistors
(Siliconix)
3N163 SERIES
P·Channel Enhancement·Mode MOS Transistors
PRODUCT SUMMARY
PART V(BR)OSS rOS(ON) 10
NUMBER (V)
(fi) (mA) PACKAGE
3N163
-40
250
-5.
3N163 - High Speed Switch
(Micross)
3N163 P-CHANNEL MOSFET
The 3N163 is an enhancement mode P-Channel Mosfet
The 3N163 is an enhancement mode P-Channel Mosfet designed for use as a Gene.
3N163 - P-CHANNEL ENHANCEMENT MODE MOSFET
(LINEAR SYSTEMS)
3N163, 3N164
P-CHANNEL ENHANCEMENT MODE
MOSFET
FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE FAST SWITCHING LOW CAPACITANC.
3N164 - P-Channel Enhancement-Mode MOS Transistors
(Siliconix)
3N163 SERIES
P·Channel Enhancement·Mode MOS Transistors
PRODUCT SUMMARY
PART V(BR)OSS rOS(ON) 10
NUMBER (V)
(fi) (mA) PACKAGE
3N163
-40
250
-5.
3N164 - P-CHANNEL ENHANCEMENT MODE MOSFET
(LINEAR SYSTEMS)
3N163, 3N164
P-CHANNEL ENHANCEMENT MODE
MOSFET
FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE FAST SWITCHING LOW CAPACITANC.
3N165 - Monolithic Dual P-Channel Enhancement Mode MOSFET
(Calogic LLC)
Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier
3N165 / 3N166
FEATURES
CORPORATION
• Very High Impedance • High Gate Bre.
3N165 - Amplifier
(Micross)
3N165 P-CHANNEL MOSFET
The 3N165 is a monolithic dual enhancement mode P-Channel Mosfet
FEATURES DIRECT REPLACEMENT FOR INTERSIL 3N165 ABSOLUTE MAX.
